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FDC6304P |
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| Part Number | FDC6304P |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | These P-Channel enhancement mode field effect transistor are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize o... |
| Features |
-25 V, -0.46 A continuous, -1.0 A Peak.
RDS(ON) = 1.5 Ω @ VGS= -2.7 V RDS(ON) = 1.1 Ω @ VGS = -4.5 V.
Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5 V.
Gate-Source Zener for ESD ruggedness. >6kV Human Body Model.
SOT-23
SuperSOTTM-6 Mark: .304
SuperSOTTM-8
SO-8
SOT-223
SOIC-16
4
3
5
2
6
1
Absolute Maximum Ratings TA = 25oC unless other wise noted
Symbol Parameter
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
ID
Drain Current
- Continuous
- Pulsed
PD
Maximum Power Dissipation
(Note 1a)
(Note 1b)
TJ,TSTG ESD
Operatin... |
| Document |
 FDC6304P Data Sheet
PDF 226.40KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDC6304P |
Fairchild Semiconductor |
Digital FET/ Dual P-Channel |
|
| 2 | FDC6301N |
Fairchild Semiconductor |
Dual N-Channel / Digital FET |
|
| 3 | FDC6301N |
ON Semiconductor |
Dual N-Channel Digital FET |
|
| 4 | FDC6302P |
Fairchild Semiconductor |
Digital FET/ Dual P-Channel |
|
| 5 | FDC6302P |
ON Semiconductor |
Dual P-Channel MOSFET |
|