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FDC642P |
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| Part Number | FDC642P |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | Max rDS(on) = 65 mΩ at VGS = -4.5 V, ID = -4.0 A Max rDS(on) = 100 mΩ at VGS = -2.5 V, ID = -3.2 A Fast switching speed Low gate charge (11nC typical) High performance trench technology for... |
| Features |
General Description
Max rDS(on) = 65 mΩ at VGS = -4.5 V, ID = -4.0 A Max rDS(on) = 100 mΩ at VGS = -2.5 V, ID = -3.2 A Fast switching speed
Low gate charge (11nC typical)
High performance trench technology for extremely low rDS(on) SuperSOTTM-6 package: small footprint (72% smaller than
standard SO-8); low profile (1 mm thick) Termination is Lead-free and RoHS Compliant
This P-Channel 2.5V specified MOSFET is produced using ON Semicondcutor’s advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for sup... |
| Document |
 FDC642P Data Sheet
PDF 291.04KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDC6420C |
ON Semiconductor |
Dual-Channel MOSFET |
|
| 2 | FDC6420C |
Fairchild Semiconductor |
20V N & P-Channel PowerTrench MOSFETs |
|
| 3 | FDC642P |
Fairchild Semiconductor |
P-Channel MOSFET |
|
| 4 | FDC642P-F085 |
ON Semiconductor |
P-Channel MOSFET |
|
| 5 | FDC642P-F085P |
ON Semiconductor |
P-Channel MOSFET |
|