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FDC6302P |
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| Part Number | FDC6302P |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | These Dual P-Channel logic level enhancement mode field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is espe... |
| Features |
-25 V, -0.12 A continuous, -0.5 A Peak.
RDS(ON) = 13 Ω @ VGS= -2.7 V RDS(ON) = 10 Ω @ VGS = -4.5 V.
Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5V.
Gate-Source Zener for ESD ruggedness. >6kV Human Body Model
Replace multiple PNP digital transistors (IMHxA series) with one DMOS FET.
SOT-23
SuperSOTTM-6
SuperSOTTM-8
SO-8
SOT-223
SOIC-16
Absolute Maximum Ratings TA = 25oC unless other wise noted
Symbol Parameter
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
ID
Drain Current
- Continuous
- Pulsed
PD
Maximum Power Dissipation
(... |
| Document |
 FDC6302P Data Sheet
PDF 343.75KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDC6302P |
Fairchild Semiconductor |
Digital FET/ Dual P-Channel |
|
| 2 | FDC6301N |
Fairchild Semiconductor |
Dual N-Channel / Digital FET |
|
| 3 | FDC6301N |
ON Semiconductor |
Dual N-Channel Digital FET |
|
| 4 | FDC6303N |
Fairchild Semiconductor |
Dual N-Channel Digital FET |
|
| 5 | FDC6304P |
Fairchild Semiconductor |
Digital FET/ Dual P-Channel |
|