2N6329 INCHANGE Silicon PNP Power Transistor Datasheet, en stock, prix

logo
Recherchez avec le numéro de pièce ainsi que le fabricant ou la description

2N6329

INCHANGE
2N6329
2N6329 2N6329
zoom Click to view a larger image
Part Number 2N6329
Manufacturer INCHANGE
Description ·Collector-Emitter Breakdown Voltage- : VCEO=-60V(Min) ·Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS ·Power amplifier and switching applications ABS...
Features Voltage IC=-15A; IB= -2A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -30A; IB= -7.5A VBE(on)-1 Base-Emitter On Voltage IC=-15A; VCE=- 4V VBE(on)-2 Base-Emitter On Voltage IC=-30A; VCE=- 4V hFE-1 DC Current Gain IC=-5A; VCE=- 4V hFE-2 DC Current Gain IC=-15A; VCE=-4V hFE-3 DC Current Gain IC=-30A; VCE=- 4V MIN TYP. MAX UNIT -60 V -500 uA -1 mA -1.5 V -3 V -2 V -4 V 25 12 6 30 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide ...

Document Datasheet 2N6329 Data Sheet
PDF 215.39KB
Distributor Stock Price Buy

Similar Datasheet

No. Partie # Fabricant Description Fiche Technique
1 2N6322
Solid States Devices
NPN Transistor Datasheet
2 2N6322
SavantIC
Silicon Power Transistor Datasheet
3 2N6322
INCHANGE
NPN Transistor Datasheet
4 2N6323
SSDI
NPN Transistor Datasheet
5 2N6324
Solid States Devices
NPN Transistor Datasheet
More datasheet from INCHANGE



Depuis 2018 :: D4U Semiconductor :: (Politique de confidentialité et contact