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NJW0302G |
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| Part Number | NJW0302G |
| Manufacturer | INCHANGE |
| Description | ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -250V(Min) ·Good Linearity of hFE ·Complement to Type NJW0281G ·Minimum Lot-to-Lot variations for robust device performance and reliable operatio... |
| Features |
CE(sat) Collector-Emitter Saturation Voltage IC= -5.0A; IB= -0.5A
VBE(on) Base−Emitter On Voltage
IC = -5.0 A, VCE = -5.0 V
ICBO
Collector Cutoff Current
VCB= -250V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE
DC Current Gain
IC= -0.5A ; VCE= -5V
hFE-1
DC Current Gain
IC= -1A ; VCE= 5V
hFE-2
DC Current Gain
IC= -3A ; VCE= -5V
NJW0302G
MIN TYP. MAX UNIT
-250
V
-1.0 V
-1.2 V
-10 μA
-5 μA
75
150
75
150
75
150
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained her... |
| Document |
 NJW0302G Data Sheet
PDF 202.32KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | NJW0302 |
INCHANGE |
PNP Transistor |
|
| 2 | NJW0302G |
ON Semiconductor |
NPN-PNP Power Bipolar Transistors |
|
| 3 | NJW0302G |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor |
|
| 4 | NJW0281 |
INCHANGE |
NPN Transistor |
|
| 5 | NJW0281G |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|