STW21NM60ND |
Part Number | STW21NM60ND |
Manufacturer | INCHANGE |
Description | Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STW21NM60ND ·FEATURES ·With TO-247 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lo... |
Features |
·With TO-247 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGSS Gate-Source Voltage ±25 V ID Drain Current-Continuous@TC=25℃ TC=125℃ 17 10 A IDM Drain Current-Single Pulsed 68 A PD Total Dissipation @TC=25℃ 140 W Tch Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THER... |
Document |
STW21NM60ND Data Sheet
PDF 358.58KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | STW21NM60N |
STMicroelectronics |
N-CHANNEL MOSFET | |
2 | STW21NM60ND |
STMicroelectronics |
N-channel MOSFET | |
3 | STW21NM50N |
STMicroelectronics |
N-CHANNEL MOSFET | |
4 | STW21N150K5 |
STMicroelectronics |
N-CHANNEL MOSFET | |
5 | STW21N65M5 |
STMicroelectronics |
N-CHANNEL MOSFET |