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STP30N10F7 |
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| Part Number | STP30N10F7 |
| Manufacturer | INCHANGE |
| Description | ·Low Drain-Source On-Resistance APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Cu... |
| Features |
·Drain Current –ID= 32A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.024Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Low Drain-Source On-Resistance APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max. Operating Junction Temperature Tstg Storage Temperature... |
| Document |
 STP30N10F7 Data Sheet
PDF 271.25KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | STP30N10F7 |
STMicroelectronics |
N-CHANNEL POWER MOSFET |
|
| 2 | STP30N05 |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
|
| 3 | STP30N05FI |
STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
|
| 4 | STP30N06 |
STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
|
| 5 | STP30N06FI |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
|