STB100N6F7-2 |
Part Number | STB100N6F7-2 |
Manufacturer | INCHANGE |
Description | Isc N-Channel MOSFET Transistor ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robus... |
Features |
·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGSS Gate-Source Voltage ±20 V ID Drain Current-ContinuousTc=25℃ 100 A IDM Drain Current-Single Pulsed 400 A PD Total Dissipation @TC=25℃ 125 W Tch Max. Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ ·THER... |
Document |
STB100N6F7-2 Data Sheet
PDF 245.86KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | STB100N6F7 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
2 | STB100N10F7 |
STMicroelectronics |
N-channel Power MOSFET | |
3 | STB100N10F7 |
INCHANGE |
N-Channel MOSFET | |
4 | STB100NF03L-03 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
5 | STB100NF03L-03-1 |
ST Microelectronics |
N-CHANNEL POWER MOSFET |