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STB12NM50ND |
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| Part Number | STB12NM50ND |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 380mΩ(Max) ·100% avalanche tested ·Min... |
| Features |
·Drain Current –ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 380mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max. Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 500 V ±25 V 11 A 44 A 10... |
| Document |
 STB12NM50ND Data Sheet
PDF 264.41KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | STB12NM50N |
STMicroelectronics |
N-channel Power MOSFET |
|
| 2 | STB12NM50ND |
STMicroelectronics |
N-channel Power MOSFET |
|
| 3 | STB12NM50 |
ST Microelectronics |
N-CHANNEL MOSFET |
|
| 4 | STB12NM50-1 |
ST Microelectronics |
N-CHANNEL MOSFET |
|
| 5 | STB12NM50-1 |
INCHANGE |
N-Channel MOSFET |
|