MJE2360T |
Part Number | MJE2360T |
Manufacturer | INCHANGE |
Description | ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = 350 V(Min) ·DC Current Gain- : hFE = 25(Min) @ IC= 50mA ·Low Collector Saturation Voltage- : VCE(sat) = 1.5V(Max.)@ IC= 100mA ·Minimum Lot-to-Lot v... |
Features |
i.com
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC =25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 2.5mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 100mA ;IB=10mA
VBE(on) Base-Emitter On Voltage
IC= 100mA; VCE= 10V
ICEO
Collector Cutoff Current
VCE= 250V; IB=0
ICEX
Collector Cutoff Current
VCE= 375V; VBE(off)= 1.5V
ICBO
Collector Cutoff Current
VCB= 375V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 50m A... |
Document |
MJE2360T Data Sheet
PDF 211.41KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MJE2360T |
Motorola |
NPN Silicon High Voltage Transistor | |
2 | MJE2361T |
Motorola |
NPN Silicon High Voltage Transistor | |
3 | MJE230 |
Central Corp |
PNP SILICON POWER TRANSISTOR | |
4 | MJE231 |
Central Corp |
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5 | MJE232 |
Central Corp |
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