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MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Silicon High-Voltage Transistor . . . useful for general–purpose, high voltage applications requiring high fT. • Collector–Emitter Sustaining Voltage — VCEO(sus) = 350 Vdc (Min) @ IC = 2.5 mAdc • DC Current Gain — hFE = 40 (Min) @ IC = 100 mAdc — MJE2361T • Current–Gain–Bandwidth Product — fT = 10 MHz (Typ) @ IC = .
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MJE2360T |
Motorola |
NPN Silicon High Voltage Transistor |
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| 2 | MJE2360T |
INCHANGE |
NPN Transistor |
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| 3 | MJE230 |
Central Corp |
PNP SILICON POWER TRANSISTOR |
|
| 4 | MJE231 |
Central Corp |
PNP SILICON POWER TRANSISTOR |
|
| 5 | MJE232 |
Central Corp |
PNP SILICON POWER TRANSISTOR |
|
| 6 | MJE233 |
Central Corp |
PNP SILICON POWER TRANSISTOR |
|
| 7 | MJE234 |
Central Corp |
PNP SILICON POWER TRANSISTOR |
|
| 8 | MJE235 |
Central Corp |
PNP SILICON POWER TRANSISTOR |
|
| 9 | MJE200 |
Motorola |
5 AMPERE POWER TRANSISTORS |
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| 10 | MJE200 |
Fairchild |
NPN Epitaxial Silicon Transistor |
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| 11 | MJE200 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
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| 12 | MJE200 |
Central Semiconductor |
COMPLEMENTARY SILICON POWER TRANSISTORS |
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