IXTP8N65X2 |
Part Number | IXTP8N65X2 |
Manufacturer | INCHANGE |
Description | isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) ≤500mΩ@VGS= 10V ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-... |
Features |
·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) ≤500mΩ@VGS= 10V ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Easy to Mount ·Space Savings ·High Power Density ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 8 A IDM Drain Current-Single Plused 16 A PD Total Dissipation @TC=25℃ 150 W Tj Max. Operating Junction Temperature -55~1... |
Document |
IXTP8N65X2 Data Sheet
PDF 247.81KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IXTP8N65X2 |
IXYS |
Power MOSFET | |
2 | IXTP8N65X2M |
IXYS |
Power MOSFET | |
3 | IXTP8N65X2M |
INCHANGE |
N-Channel MOSFET | |
4 | IXTP8N50P |
IXYS |
PolarHV Power MOSFET | |
5 | IXTP8N50P |
INCHANGE |
N-Channel MOSFET |