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IXTH67N10 |
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| Part Number | IXTH67N10 |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 25mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot ... |
| Features |
·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 25mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switch-Mode and Resonant-Mode Power Supplies ·DC-DC Converters ·AC and DC Motor Drives ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 67 A IDM Drain Current-Single Plused 268 A PD Total Dissipation @TC=25℃ 300 W Tj Max. ... |
| Document |
 IXTH67N10 Data Sheet
PDF 332.62KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IXTH67N10 |
IXYS Corporation |
N-Channel MOSFET |
|
| 2 | IXTH60N15 |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IXTH60N15 |
IXYS |
Power MOSFET |
|
| 4 | IXTH60N20L2 |
IXYS |
Power MOSFET |
|
| 5 | IXTH60N20L2 |
INCHANGE |
N-Channel MOSFET |
|