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IXTH24N50Q |
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| Part Number | IXTH24N50Q |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor ·FEATURES ·With TO-247 packaging ·High speed switching ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device ... |
| Features |
·With TO-247 packaging ·High speed switching ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGSS Gate-Source Voltage ±30 V ID Drain Current-Continuous 24 A IDM Drain Current-Single Pulsed 96 A PD Total Dissipation 360 W Tj Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTIC... |
| Document |
 IXTH24N50Q Data Sheet
PDF 329.81KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IXTH24N50 |
IXYS Corporation |
MegaMOS FET |
|
| 2 | IXTH24N50L |
IXYS Corporation |
Power MOSFET |
|
| 3 | IXTH24N50L |
INCHANGE |
N-Channel MOSFET |
|
| 4 | IXTH24N45 |
IXYS |
(IXTHxxxx) MOS FETs |
|
| 5 | IXTH24N65X2 |
IXYS |
Power MOSFET |
|