IXTH24N50L |
Part Number | IXTH24N50L |
Manufacturer | INCHANGE |
Description | isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 480mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot var... |
Features |
·Static drain-source on-resistance: RDS(on) ≤ 480mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·Current Regulators ·Solid State Circuit Breakers ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 24 A IDM Drain Current-Single Pulsed 50 A PD Total Dissipation @TC=25℃ 400 W Tj Operating Junction Temperature -55~150 ℃ Tstg Storage T... |
Document |
IXTH24N50L Data Sheet
PDF 334.60KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IXTH24N50 |
IXYS Corporation |
MegaMOS FET | |
2 | IXTH24N50L |
IXYS Corporation |
Power MOSFET | |
3 | IXTH24N50Q |
INCHANGE |
N-Channel MOSFET | |
4 | IXTH24N45 |
IXYS |
(IXTHxxxx) MOS FETs | |
5 | IXTH24N65X2 |
IXYS |
Power MOSFET |