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TK35N65W |
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| Part Number | TK35N65W |
| Manufacturer | INCHANGE |
| Description | Isc N-Channel MOSFET Transistor TK35N65W ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 55mΩ (MAX) ·Enhancement mode: Vth = 2.5 to 3.5V (VDS = 10 V, ID=2.1mA) ·100% avalanche tested ·Minimum L... |
| Features |
·Low drain-source on-resistance: RDS(ON) = 55mΩ (MAX) ·Enhancement mode: Vth = 2.5 to 3.5V (VDS = 10 V, ID=2.1mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 49.2 A IDM Drain Current-Single Pulsed 196 A PD Total Dissipation @TC=25℃ 400 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -5... |
| Document |
 TK35N65W Data Sheet
PDF 395.87KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TK35N65W |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 2 | TK35N65W5 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 3 | TK35N65W5 |
INCHANGE |
N-Channel MOSFET |
|
| 4 | TK35A08N1 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 5 | TK35A08N1 |
INCHANGE |
N-Channel MOSFET |
|