IPI65R190C6 |
Part Number | IPI65R190C6 |
Manufacturer | INCHANGE |
Description | ·Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-... |
Features |
·Static drain-source on-resistance: RDS(on) ≤0.19Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 20.2 A IDM Drain Current-Single Pulsed 66 A PD Total Dissipation @TC=25℃ 151 W Tj Max. Operating Junction Temperature 150 ... |
Document |
IPI65R190C6 Data Sheet
PDF 282.17KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | IPI65R190C6 |
Infineon Technologies |
Power Transistor | |
2 | IPI65R190CFD |
Infineon Technologies |
CFD2 Power Transistor | |
3 | IPI65R190CFD |
INCHANGE |
N-Channel MOSFET | |
4 | IPI65R190E6 |
Infineon Technologies |
Power Transistor | |
5 | IPI65R190E6 |
INCHANGE |
N-Channel MOSFET |