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IPA60R190E6 |
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| Part Number | IPA60R190E6 |
| Manufacturer | INCHANGE |
| Description | Isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPA60R190E6 ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conduction... |
| Features |
·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous @Tc=25℃ (VGS at 10V) Tc=100℃ Drain Current-Single Pulsed ±20 20.2 12.8 59 PD Total Dissipation @TC=25℃ 34 Tj Max. Operating Junction Temperature -55~150 Tstg St... |
| Document |
 IPA60R190E6 Data Sheet
PDF 219.00KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPA60R190E6 |
Infineon Technologies |
E6 Power Transistor |
|
| 2 | IPA60R190C6 |
Infineon Technologies |
MOSFET |
|
| 3 | IPA60R190C6 |
INCHANGE |
N-Channel MOSFET |
|
| 4 | IPA60R190P6 |
Infineon |
MOSFET |
|
| 5 | IPA60R190P6 |
INCHANGE |
N-Channel MOSFET |
|