IPA60R099P6 |
Part Number | IPA60R099P6 |
Manufacturer | INCHANGE |
Description | Isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPA60R099P6 ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conduction... |
Features |
·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous @Tc=25℃ (VGS at 10V) Tc=100℃ 37.9 24 A IDM Drain Current-Single Pulsed 109 A PD Total Dissipation @TC=25℃ 34 W Tj Max. Operating Junction Temper... |
Document |
IPA60R099P6 Data Sheet
PDF 218.86KB |
Distributor | Stock | Price | Buy |
---|
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IPA60R099P6 |
Infineon Technologies |
MOSFET | |
2 | IPA60R099P7 |
Infineon |
Power-Transistor | |
3 | IPA60R099C6 |
Infineon Technologies |
MOSFET | |
4 | IPA60R099C6 |
INCHANGE |
N-Channel MOSFET | |
5 | IPA60R099C7 |
Infineon |
MOSFET |