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FDP8880 |
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| Part Number | FDP8880 |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220 packaging ·Drain Source Voltage- : VDSS ≥ 30V ·Static drain-source on-resistance: RDS(on) ≤ 116mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to... |
| Features |
·With TO-220 packaging ·Drain Source Voltage- : VDSS ≥ 30V ·Static drain-source on-resistance: RDS(on) ≤ 116mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous;@Tc=25℃ 54 A PD Total Dissipation 55 W Tj Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ ·THERMAL CHARACTERISTIC... |
| Document |
 FDP8880 Data Sheet
PDF 278.41KB |
| Distributor | Stock | Price | Buy |
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