FCP099N60E |
Part Number | FCP099N60E |
Manufacturer | INCHANGE |
Description | isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220 packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot va... |
Features |
·With TO-220 packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous;@Tc=25℃ Tc=100℃ 37 24 A IDM Drain Current-Single Pulsed 111 A PD Total Dissipation 357 W Tj Operating Junction Temperature -55~150 ℃ Tstg Storage... |
Document |
FCP099N60E Data Sheet
PDF 253.05KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | FCP099N60E |
Fairchild Semiconductor |
N-Channel MOSFET | |
2 | FCP099N65S3 |
INCHANGE |
N-Channel MOSFET | |
3 | FCP099N65S3 |
ON Semiconductor |
N-Channel MOSFET | |
4 | FCP067N65S3 |
ON Semiconductor |
Power MOSFET | |
5 | FCP067N65S3 |
INCHANGE |
N-Channel MOSFET |