Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
SPP06N80C3 |
Click to view a larger image
| Part Number | SPP06N80C3 |
| Manufacturer | INCHANGE |
| Description | ·High peak current capability ·Ultra low gate charge ·Ultra low effective capacitances ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGS Gate-Source V... |
| Features |
·Static drain-source on-resistance: RDS(on) ≤0.9Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·High peak current capability ·Ultra low gate charge ·Ultra low effective capacitances ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 6 IDM Drain Current-Single Pulsed 18 PD Total Dissipation @TC=25℃ 83 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperatur... |
| Document |
 SPP06N80C3 Data Sheet
PDF 243.44KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SPP06N80C2 |
Infineon Technologies |
Cool MOS Power Transistor |
|
| 2 | SPP06N80C3 |
Infineon Technologies |
Power Transistor |
|
| 3 | SPP06N60C3 |
Infineon Technologies |
Cool MOS Power Transistor |
|
| 4 | SPP06N60C3 |
INCHANGE |
N-Channel MOSFET |
|
| 5 | SPP02N60C3 |
Infineon Technologies |
Power Transistor |
|