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SPD50N03S2-07G |
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| Part Number | SPD50N03S2-07G |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | OptiMOS&!Power-Transistor Feature % N-Channel % Enhancement mode % Excellent Gate Charge x RDS(on) product (FOM) %!Superior thermal resistance %!175°C operating temperature % Avalanche rated % dv/dt r... |
| Features |
er
Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB:
@ min. footprint @ 6 cm2 cooling area 3)
SPD50N03S2-07 G
Symbol
Values
Unit
min. typ. max.
RthJC RthJA RthJA
-
0.7 1.1 K/W
-
- 100
-
-
75
-
-
50
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
VGS=0V, ID=1mA
Gate threshold voltage, VGS = VDS
ID=85µA
Zero gate voltage drain current
VDS=30V, VGS=0V, Tj=25°C VDS=30V, VGS=0V, Tj... |
| Document |
 SPD50N03S2-07G Data Sheet
PDF 1.15MB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SPD50N03S2-07 |
Infineon Technologies |
Power-Transistor |
|
| 2 | SPD50N03S2 |
INCHANGE |
N-Channel MOSFET |
|
| 3 | SPD50N03S2L-06 |
Infineon Technologies |
OptiMOS Power-Transistor |
|
| 4 | SPD50N06S2-14 |
Infineon Technologies |
OptiMOS Power-Transistor |
|
| 5 | SPD50N06S2L-13 |
Infineon Technologies |
OptiMOS Power-Transistor |
|