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KP8N60F |
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| Part Number | KP8N60F |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.58Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust d... |
| Features |
·Static drain-source on-resistance: RDS(on) ≤0.58Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Suitable for active power factor correction and switching mode Power supplies ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 8 IDM Drain Current-Single Pulsed 18 PD Total Dissipation @TC=25℃ 37.9 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55... |
| Document |
 KP8N60F Data Sheet
PDF 241.72KB |
| Distributor | Stock | Price | Buy |
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