This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES VDSS=600V, ID=8A Drain-Source ON Resistance : RDS(ON)(Max)=0.58 @VGS=10V Qg(typ.)= 16nC MAXIMUM RA.
VDSS=600V, ID=8A Drain-Source ON Resistance : RDS(ON)(Max)=0.58 @VGS=10V Qg(typ.)= 16nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
SYMBOL
RATING
Drain-Source Voltage
Gate-Source Voltage
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy (Note 2)
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery dv/dt (Note 3)
Drain Power Dissipation
Tc=25 Derate above 25
VDSS VGSS
ID IDP EAS EAR dv/dt
PD
600 30 8 5
18
* 125
3.7
4.5 73.5 0.59
Maximum Junction Temperature Storage Temperature Range Thermal Characteristics
Tj Tstg
150 -55 150
Thermal Resistance, Junction-.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | KP8N60F |
KEC |
N-Channel MOSFET | |
2 | KP8N60F |
INCHANGE |
N-Channel MOSFET | |
3 | KP8N60I |
KEC |
N-Channel MOSFET | |
4 | KP8N65D |
KEC |
N-Channel MOSFET | |
5 | KP8N65I |
KEC |
N-Channel MOSFET | |
6 | KP800A |
HUAJING |
Phase Control Thyristor | |
7 | KP800A |
ETC |
thyristor | |
8 | KP803 |
YZPST |
HIGH POWER THYRISTOR | |
9 | KP804 |
YZPST |
HIGH POWER THYRISTOR | |
10 | KP807 |
YZPST |
HIGH POWER THYRISTOR | |
11 | KP823C03 |
Fuji Electric |
SCHOTTKY BARRIER DIODE | |
12 | KP823C04 |
Fuji Electric |
SCHOTTKY BARRIER DIODE |