IPW60R041C6 |
Part Number | IPW60R041C6 |
Manufacturer | INCHANGE |
Description | isc N-Channel MOSFET Transistor IPW60R041C6 IIPW60R041C6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤41mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robus... |
Features |
·Static drain-source on-resistance: RDS(on)≤41mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast Switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 77.5 IDM Drain Current-Single Pulsed 272 PD Total Dissipation @TC=25℃ 481 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Cha... |
Document |
IPW60R041C6 Data Sheet
PDF 238.18KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | IPW60R041C6 |
Infineon Technologies |
MOSFET | |
2 | IPW60R041P6 |
Infineon |
MOSFET | |
3 | IPW60R041P6 |
INCHANGE |
N-Channel MOSFET | |
4 | IPW60R040C7 |
Infineon |
MOSFET | |
5 | IPW60R040C7 |
INCHANGE |
N-Channel MOSFET |