CoolMOSTM Power Transistor Features • Lowest figure of merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant • Quailfied according to JEDEC1) for target applications Product Summary V DS @Tjmax R DS(on),max Q g,typ IPP50R299CP 550 V 0.299 Ω 23 nC PG-TO220 CoolMOS CP is designed .
• Lowest figure of merit RON x Qg
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Pb-free lead plating; RoHS compliant
• Quailfied according to JEDEC1) for target applications
Product Summary V DS @Tjmax R DS(on),max Q g,typ
IPP50R299CP
550 V 0.299 Ω
23 nC
PG-TO220
CoolMOS CP is designed for:
• Hard- & soft switching SMPS topologies
• CCM PFC for Notebook adapter, PDP and LCD TV
• PWM for Notebook adapter, PDP and LCD TV
Type IPP50R299CP
Package PG-TO220
Marking 5R299P
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions.
isc N-Channel MOSFET Transistor IPP50R299CP,IIPP50R299CP ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.299Ω.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPP50R250CP |
Infineon |
Power Transistor | |
2 | IPP50R250CP |
INCHANGE |
N-Channel MOSFET | |
3 | IPP50R280CE |
Infineon |
MOSFET | |
4 | IPP50R280CE |
INCHANGE |
N-Channel MOSFET | |
5 | IPP50R140CP |
Infineon |
Power Transistor | |
6 | IPP50R140CP |
INCHANGE |
N-Channel MOSFET | |
7 | IPP50R190CE |
Infineon |
MOSFET | |
8 | IPP50R190CE |
INCHANGE |
N-Channel MOSFET | |
9 | IPP50R199CP |
Infineon |
Power Transistor | |
10 | IPP50R199CP |
INCHANGE |
N-Channel MOSFET | |
11 | IPP50R350CP |
Infineon |
Power Transistor | |
12 | IPP50R350CP |
INCHANGE |
N-Channel MOSFET |