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IPD50R280CE |
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| Part Number | IPD50R280CE |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor IPD50R280CE,IIPD50R280CE ·FEATURES ·Static drain-source on-resistance: RDS(on)≤280mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robus... |
| Features |
·Static drain-source on-resistance: RDS(on)≤280mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 18.1 IDM Drain Current-Single Pulsed 42.9 PD Total Dissipation @TC=25℃ 119 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) C... |
| Document |
 IPD50R280CE Data Sheet
PDF 237.79KB |
| Distributor | Stock | Price | Buy |
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| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPD50R280CE |
Infineon |
MOSFET |
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| 2 | IPD50R2K0CE |
Infineon |
MOSFET |
|
| 3 | IPD50R2K0CE |
INCHANGE |
N-Channel MOSFET |
|
| 4 | IPD50R1K4CE |
Infineon |
MOSFET |
|
| 5 | IPD50R1K4CE |
INCHANGE |
N-Channel MOSFET |
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