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FQP50N06L |
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| Part Number | FQP50N06L |
| Manufacturer | INCHANGE |
| Description | ·Drain Current ID=50A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 22mΩ(Max) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device per... |
| Features |
rk
isc N-Channel Mosfet Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA VGS(TH) Gate Threshold Voltage VDS= VGS; ID= 0.25mA RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 25A IGSS Gate Source Leakage Current VGS= ±25V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 60V; VGS= 0 VSD Diode Forward Voltage IF= 50A; VGS= 0 FQP50N06L MIN MAX UNIT 60 V 1 2.5 V 0.022 Ω ±100 nA 1 uA 1.5 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at an... |
| Document |
 FQP50N06L Data Sheet
PDF 226.23KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FQP50N06 |
Fairchild Semiconductor |
60V N-Channel MOSFET |
|
| 2 | FQP50N06 |
Thinki Semiconductor |
N-Channel Power MOSFET |
|
| 3 | FQP50N06 |
INCHANGE |
N-Channel MOSFET |
|
| 4 | FQP50N06L |
ON Semiconductor |
N-Channel MOSFET |
|
| 5 | FQP50N06L |
Fairchild Semiconductor |
60V LOGIC N-Channel MOSFET |
|