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IPB60R120P7 |
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| Part Number | IPB60R120P7 |
| Manufacturer | INCHANGE |
| Description | Isc N-Channel MOSFET Transistor IPB60R120P7 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variati... |
| Features |
·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 26 16 78 PD Total Dissipation @TC=25℃ 95 Tch Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHAR... |
| Document |
 IPB60R120P7 Data Sheet
PDF 254.25KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPB60R120P7 |
Infineon |
MOSFET |
|
| 2 | IPB60R125C6 |
Infineon Technologies |
MOSFET |
|
| 3 | IPB60R125C6 |
INCHANGE |
N-Channel MOSFET |
|
| 4 | IPB60R125CP |
Infineon Technologies |
Power Transistor |
|
| 5 | IPB60R125CP |
INCHANGE |
N-Channel MOSFET |
|