Isc N-Channel MOSFET Transistor IPB60R125CP ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDS.
·With To-263(D2PAK) package
·Low input capacitance and gate charge
·Low gate input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGSS ID IDM
Gate-Source Voltage
Drain Current-ContinuousTc=25℃ Tc=100℃
Drain Current-Single Pulsed
±30
25 16
82
PD
Total Dissipation @TC=25℃
208
Tch
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHA.
CoolMOSTM Power Transistor Features • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPB60R125C6 |
Infineon Technologies |
MOSFET | |
2 | IPB60R125C6 |
INCHANGE |
N-Channel MOSFET | |
3 | IPB60R120P7 |
INCHANGE |
N-Channel MOSFET | |
4 | IPB60R120P7 |
Infineon |
MOSFET | |
5 | IPB60R160C6 |
Infineon Technologies |
MOSFET | |
6 | IPB60R160C6 |
INCHANGE |
N-Channel MOSFET | |
7 | IPB60R160P6 |
Infineon |
MOSFET | |
8 | IPB60R160P6 |
INCHANGE |
N-Channel MOSFET | |
9 | IPB60R165CP |
Infineon Technologies |
Power Transistor | |
10 | IPB60R165CP |
INCHANGE |
N-Channel MOSFET | |
11 | IPB60R180C7 |
INCHANGE |
N-Channel MOSFET | |
12 | IPB60R180C7 |
Infineon |
MOSFET |