FQD13N10 |
Part Number | FQD13N10 |
Manufacturer | INCHANGE |
Description | isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.18Ω ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ... |
Features |
·Static drain-source on-resistance: RDS(on)≤0.18Ω ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±25 ID Drain Current-Continuous 10 IDM Drain Current-Single Pulsed 40 PD Total Dissipation @TC=25℃ 40 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case t... |
Document |
FQD13N10 Data Sheet
PDF 273.83KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | FQD13N10 |
Fairchild Semiconductor |
100V N-Channel MOSFET | |
2 | FQD13N10L |
Fairchild Semiconductor |
100V LOGIC N-Channel MOSFET | |
3 | FQD13N06 |
Fairchild Semiconductor |
60V N-Channel MOSFET | |
4 | FQD13N06L |
Fairchild Semiconductor |
N-Channel QFET MOSFET | |
5 | FQD13N06TM |
Fairchild Semiconductor |
60V N-Channel MOSFET |