FQD13N06TM - Fairchild Semiconductor

FQD13N06TM 60V N-Channel MOSFET

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power.

Features

• 10 A, 60 V, RDS(on) = 140 mΩ (Max.) @ VGS = 10 V, ID = 5.0 A
• Low Gate Charge (Typ. 5.8 nC)
• Low Crss (Typ. 15 pF)
• 100% Avalanche Tested D G S D D-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C)
* Power Dissipation (TC = 25°C) - D.