TK31A60W |
Part Number | TK31A60W |
Manufacturer | INCHANGE |
Description | Isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK31A60W, ITK31A60W ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.073Ω (typ.) ·Easy to control Gate switching ·Enhancement mode: Vth =... |
Features |
·Low drain-source on-resistance: RDS(ON) = 0.073Ω (typ.) ·Easy to control Gate switching ·Enhancement mode: Vth = 2.7 to 3.7V (VDS = 10 V, ID=1.5mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 30.8 IDM Drain Current-Single Pulsed 123 PD Total Dissipation @TC=25℃ 45 Tj Max. Operating Junction Temperature 150 Tstg Storage Tempe... |
Document |
TK31A60W Data Sheet
PDF 248.72KB |
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