2SK2611 INCHANGE N-Channel MOSFET Datasheet, en stock, prix

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2SK2611

INCHANGE
2SK2611
2SK2611 2SK2611
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Part Number 2SK2611
Manufacturer INCHANGE
Description ·Drain Current –ID=9A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·low on–r...
Features L CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA VGS(TH) Gate Threshold Voltage VDS= 10V; ID= 1mA RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 4A IGSS Gate Source Leakage Current VGS= ±30V; VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=720V; VGS= 0 VSD Diode Forward Voltage IF= 9A; VGS=0 Gfs Forward Transconductance VDS= 15V;ID=4A 2SK2611 MIN TYP MAX UNIT 900 V 2.0 4.0 V 1.4 Ω ±10 uA 100 uA 1.9 V 3.0 S NOTICE: ISC reserves the rights to make changes of the content herein the datasheet ...

Document Datasheet 2SK2611 Data Sheet
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