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BD540C |
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| Part Number | BD540C |
| Manufacturer | INCHANGE |
| Description | ·DC Current Gain - : hFE = 40(Min.)@ IC= -0.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·Complement to Type BD539C ·Minimum Lot-to-Lot variations for robust device performance and ... |
| Features |
NP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -1A; IB= -0.125A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -3A; IB= -0.375A
VCE(sat)-3 Collector-Emitter Saturation Voltage IC= -5A; IB= -1A
VBE(on) Base-Emitter On Voltage
IC= -3A; VCE= -4V
ICEO
Collector Cutoff Current
VCB= -60V; IB= 0
ICES
Collector Cutoff Current
VCE= -100V; VBE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Curren... |
| Document |
 BD540C Data Sheet
PDF 189.61KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BD540 |
Power Innovations Limited |
PNP SILICON POWER TRANSISTORS |
|
| 2 | BD540 |
INCHANGE |
PNP Transistor |
|
| 3 | BD540A |
Power Innovations Limited |
PNP SILICON POWER TRANSISTORS |
|
| 4 | BD540A |
INCHANGE |
PNP Transistor |
|
| 5 | BD540B |
Power Innovations Limited |
PNP SILICON POWER TRANSISTORS |
|