BD540A - Power Innovations Limited

BD540A PNP SILICON POWER TRANSISTORS

BD540, BD540A, BD540B, BD540C PNP SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 q Designed for Complementary Use with the BD539 Series 45 W at 25°C Case Temperature 5 A Continuous Collector Current Customer-Specified Selections Available B C E q q q TO-220 PACKAGE (TOP VIEW) 1 2 3 Pin 2 is in e.

Features

ese values apply when the base-emitter diode is open circuited. 2. Derate linearly to 150°C case temperature at the rate of 0.36 W/°C. 3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. V EBO IC Ptot Ptot TA Tj Tstg TL VCEO VCBO SYMBOL VALUE -40 -60 -80 -100 -40 -60 -80 -100 -5 -5 45 2 -65 to +150 -65 to +150 -65 to +150 260 V A W W °C °C °C °C V V UNIT PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily incl.