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2SD1609 |
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| Part Number | 2SD1609 |
| Manufacturer | INCHANGE |
| Description | ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·Good Linearity of hFE ·100% avalanche tested ·Complement to Type 2SB1109 ·Minimum Lot-to-Lot variations for robust device performance ... |
| Features |
NS
V(BR)CBO Collector-Base Breakdown Voltage
IC= 0.1mA ; IE= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; RBE= ∞
V(BR)EBO Emitter-Base Breakdown Vltage
IE=0.1mA ; IC=0
VCE(sat) Collector-Emitter Saturation Voltage IC= 30mA; IB= 3mA
VBE(on) Base-Emitter Saturation Voltage
IC= 10mA ; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 160V; IE= 0
hFE-1
DC Current Gain
IC= 10mA ; VCE= 5V
hFE-2
DC Current Gain
IC= 1mA ; VCE= 5V
fT
Current-Gain—Bandwidth Product
IC= 10mA ; VCE= 5V
COB
Output Capacitance
IE= 0; VCB= 10V, ftest= 1MHz
MIN TYP. MAX UNIT
160
V
160
V
5
V
... |
| Document |
 2SD1609 Data Sheet
PDF 189.44KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SD1600 |
INCHANGE |
NPN Transistor |
|
| 2 | 2SD1601 |
Inchange Semiconductor |
Power Transistor |
|
| 3 | 2SD1602 |
Inchange Semiconductor |
Power Transistor |
|
| 4 | 2SD1603 |
Inchange Semiconductor Company |
Silicon NPN Darlington Power Transistor |
|
| 5 | 2SD1603 |
Hitachi Semiconductor |
NPN Transistor |
|