2SD650 INCHANGE NPN Transistor Datasheet, en stock, prix

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2SD650

INCHANGE
2SD650
2SD650 2SD650
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Part Number 2SD650
Manufacturer INCHANGE
Description ·Collector-Emitter Sustaining Voltage- VCEO(SUS)= 400V(Min) ·High Power Dissipation ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operatio...
Features otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 10mA VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 10mA ICBO Collector Cutoff Current VCB=400V; IE=0 ICEO Collector Cutoff Current VCE= 400V;IB= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 hFE DC Current Gain IC= 4A; VCE= 2V MIN TYP. MAX UNIT 400 V 400 V 7 V 1.6 V 2.0 V 0....

Document Datasheet 2SD650 Data Sheet
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