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2SC1617 |
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| Part Number | 2SC1617 |
| Manufacturer | INCHANGE |
| Description | ·Silicon NPN triple diffused type ·High voltage ·Wide area of safe operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·B... |
| Features |
E(sat) Collector-Emitter Saturation Voltage IC=5A; IB= 0.5A
VBE(sat) Base-Emitter Saturation Voltage
IC=5A; IB= 0.5A
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
hFE
DC Current Gain
IC=1A; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 250V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
MIN TYP. MAX UNIT
1.0
V
1.5
V
100
V
5
V
30
150
1.0 mA
1.0 mA
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is... |
| Document |
 2SC1617 Data Sheet
PDF 174.29KB |
| Distributor | Stock | Price | Buy |
|---|
