TIP102 |
Part Number | TIP102 |
Manufacturer | INCHANGE |
Description | ·High DC Current Gain- : hFE = 1000(Min)@ IC= 3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 2.0V(Max)@ IC= 3A = 2.5V(Max)@ I... |
Features |
Junction to Case
1.56 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W
TIP102
isc website: www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon NPN Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA, IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A ,IB= 6mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A ,IB= 80mA
VBE(on) Base-Emitter On Voltage
IC= 8A ; VCE= 4V
ICBO
Collector Cutoff Current
VCB= 100V, IE= 0
IC... |
Document |
TIP102 Data Sheet
PDF 208.96KB |
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