MJE18006 |
Part Number | MJE18006 |
Manufacturer | INCHANGE |
Description | ·Collector-Base Breakdown Voltage- : V(BR)CBO= 1000V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in 2... |
Features |
Silicon NPN Power Transistor
MJE18006
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS) Collector-Emitter Sustaining Voltage
VCE(sat)-1 Collector-Emitter Saturation Voltage
VCE(sat)-2 Collector-Emitter Saturation Voltage
VBE(sat)-1 Base-Emitter Saturation Voltage
CONDITIONS
IC= 30mA; IB= 0
IC= 1.5 A ;IB= 0.15A TC=125℃ IC= 3A ;IB= 0.6A TC=125℃
IC= 1.5A; IB= 0.15A
MIN TYP MAX UNIT
450
V
0.6 0.65
V
0.7 0.8
V
1.2
V
VBE(sat)-2 Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
IC= 3A; IB= 0.6A
VCES=RatedVCES; VEB= 0 TC=125℃
VCE... |
Document |
MJE18006 Data Sheet
PDF 212.33KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MJE18002 |
INCHANGE |
NPN Transistor | |
2 | MJE18002 |
Motorola |
POWER TRANSISTOR | |
3 | MJE18002 |
SavantIC |
SILICON POWER TRANSISTOR | |
4 | MJE18002D2 |
Motorola |
POWER TRANSISTORS | |
5 | MJE18004 |
INCHANGE |
NPN Transistor |