2N4070 INCHANGE NPN Transistor Datasheet, en stock, prix

logo
Recherchez avec le numéro de pièce ainsi que le fabricant ou la description

2N4070

INCHANGE
2N4070
2N4070 2N4070
zoom Click to view a larger image
Part Number 2N4070
Manufacturer INCHANGE
Description ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Desi...
Features ollector-Emitter Sustaining Voltage IC=100mA ; IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A ICEO Collector Cutoff Current VCE= 100V; IB=0 IEBO Emitter Cutoff Current VEB= 8.0V; IC=0 hFE DC Current Gain IC= 5A ; VCE= 5V fT Current Gain-Bandwidth Product *:Pulse test:Pulse width=300us,duty cycle≤2% IC= 0.2A ; VCE= 10V;f=1.0MHz 2N4070 MIN MAX UNIT 100 V 0.6 V 1.5 V 0.25 mA 5.0 mA 40 120 20 MHz NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time...

Document Datasheet 2N4070 Data Sheet
PDF 179.42KB
Distributor Stock Price Buy

Similar Datasheet

No. Partie # Fabricant Description Fiche Technique
1 2N4070
SSDI
NPN Transistor Datasheet
2 2N4071
SSDI
NPN Transistor Datasheet
3 2N4072
Motorola
NPN silicon annular transistors Datasheet
4 2N4073
Motorola
NPN silicon annular transistors Datasheet
5 2N40
ART CHIP
N-Channel MOSFET Datasheet
More datasheet from INCHANGE



Depuis 2018 :: D4U Semiconductor :: (Politique de confidentialité et contact