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BD434 |
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| Part Number | BD434 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= -22V(Min) ·Complement to type BD433 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for ... |
| Features |
Voltage IC= -30mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A
VBE(on) Base-Emitter On Voltage
IC= -2A; VCE= -1V
ICBO
Collector Cutoff Current
VCB= -22V; IE= 0
ICEO
Collector Cutoff Current
VCE= -22V; VBE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -10mA; VCE= -5V
hFE-2
DC Current Gain
IC= -0.5A; VCE= -1V
hFE-3
DC Current Gain
IC= -2A; VCE= -1V
fT
Current-Gain—Bandwidth Product IC= -0.25A; VCE= -1V
BD434
MIN TYP. MAX UNIT
-22
V
-0.5 V
-1.1 V
-100 μA
-100 μA
-1 mA
40
85
50
3
MHz
NOTICE： ISC reserves t... |
| Document |
 BD434 Data Sheet
PDF 204.07KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BD430 |
Siemens Semiconductor Group |
PNP SILICON PLANAR TRANSISTOR |
|
| 2 | BD433 |
STMicroelectronics |
COMPLEMENTARY SILICON POWER TRANSISTORS |
|
| 3 | BD433 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor |
|
| 4 | BD433 |
TRANSYS Electronics |
EPITAXIAL SILICON POWER TRANSISTORS |
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| 5 | BD433 |
Comset Semiconductors |
Silicon NPN Power Transistors |
|