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2SD1159 |
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| Part Number | 2SD1159 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max) @IC= 4A ·Minimum Lot-to-Lot variations for robust device performance and rel... |
| Features |
A; IE= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE= ∞
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A
VBE(sat) Base-Emitter Saturation Voltage
IC= 4A; IB= 0.4A
ICBO
Collector Cutoff Current
VCB= 40V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 1A; VCE= 5V
hFE-2
DC Current Gain
IC= 4A; VCE= 5V
fT
Current-Gain—Bandwidth Product
IC= 1A; VCE= 5V
tf
Fall Time
IC= 5A, IB1= IB2= 0.5A
2SD1159
MIN TYP. MAX UNIT
200
V
60
V
6
V
1.0
V
1.5
V
100 μA
100 μ... |
| Document |
 2SD1159 Data Sheet
PDF 203.66KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SD1151 |
ETC |
Si NPN triple diffused planar Transistor |
|
| 2 | 2SD1153 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 3 | 2SD1154 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 4 | 2SD1157 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 5 | 2SD1158 |
INCHANGE |
NPN Transistor |
|