2SC3852 INCHANGE NPN Transistor Datasheet, en stock, prix

logo
Recherchez avec le numéro de pièce ainsi que le fabricant ou la description

2SC3852

INCHANGE
2SC3852
2SC3852 2SC3852
zoom Click to view a larger image
Part Number 2SC3852
Manufacturer INCHANGE
Description ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= 0.5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ...
Features V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 50mA 0.5 V ICBO Collector Cutoff Current VCB= 80V; IE= 0 100 μA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 100 μA hFE DC Current Gain IC= 0.5A; VCE= 4V 200 COB Output Capacitance IE= 0; VCB= 10V; f= 1MHz 50 pF fT Current-Gain—Bandwidth Product IE= -0.2A; VCE= 12V 15 MHz Switching Times ton Turn-On Time tstg Storage Time tf Fall Time IC= 1A; IB1= 15mA; IB2= -30mA; VCC= 20V; RL= 20Ω 0.8 μs 3.0 μs 1.2 μs NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any ti...

Document Datasheet 2SC3852 Data Sheet
PDF 202.15KB
Distributor Stock Price Buy

Similar Datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 2SC3850
SavantIC
SILICON POWER TRANSISTOR Datasheet
2 2SC3850
INCHANGE
NPN Transistor Datasheet
3 2SC3851
Sanken electric
Silicon NPN Transistor Datasheet
4 2SC3851
SavantIC
SILICON POWER TRANSISTOR Datasheet
5 2SC3851
INCHANGE
NPN Transistor Datasheet
More datasheet from INCHANGE



Depuis 2018 :: D4U Semiconductor :: (Politique de confidentialité et contact