2SC3850 - INCHANGE

2SC3850 NPN Transistor

·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) ·Good Linearity of hFE ·High Collector Current ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Ba.

Features

ified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB=0 400 V VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 2A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 10A; IB= 2A 1.5 V ICBO Collector Cutoff Current VCB= 500V ; IE= 0 100 μA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 100 μA hFE-1 DC Current Gain IC= 2A ; VCE= 5V 15 hFE-2 DC Current Gain IC= 10A ; VCE= 5V 10 fT Current-Gain—Bandwidth Product IC= 1A ; VCE= 10V; f= 1MHz 15 MHz Switching Times ton Turn-on Time 1.0 μs tstg Stora.