Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
2SC2612 |
Click to view a larger image
| Part Number | 2SC2612 |
| Manufacturer | INCHANGE |
| Description | ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation AP... |
| Features |
lector-Emitter Sustaining Voltage IC= 30mA; IB= 0
400
V
V(BR)EBO Emitter-Base Breakdown Vltage
IE= 10mA; IC= 0
7
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A
1.0
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 1.5A; IB= 0.3A
1.5
V
ICBO
Collector Cutoff Current
VCB= 400V; IE= 0
100 μA
ICEO
Collector Cutoff Current
VCE= 350V; RBE= ∞
100 μA
hFE-1
DC Current Gain
IC= 1.5A; VCE= 5V
15
hFE-2
DC Current Gain
IC= 3A; VCE= 5V
7
Switching Times
ton
Turn-on Time
1.0 μs
tstg
Storage Time
IC= 3A,IB1= -IB2=0.6A,VCC≈150V
2.5 μs
tf
Fall Time
1.0 μs
... |
| Document |
 2SC2612 Data Sheet
PDF 188.98KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC2610 |
Hitachi Semiconductor |
Silicon NPN Triple Diffused Transistor |
|
| 2 | 2SC2610 |
Renesas |
Silicon NPN Triple Diffused Transistor |
|
| 3 | 2SC2611 |
INCHANGE |
NPN Transistor |
|
| 4 | 2SC2611 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 5 | 2SC2611 |
SavantIC |
SILICON POWER TRANSISTOR |
|