2SB1530 INCHANGE PNP Transistor Datasheet, en stock, prix

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2SB1530

INCHANGE
2SB1530
2SB1530 2SB1530
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Part Number 2SB1530
Manufacturer INCHANGE
Description ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) ·Complement to Type 2SD2337 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed fo...
Features itter Breakdown Voltage IC= -10mA; RBE= ∞ -150 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA; IC= 0 -6 V VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA -3.0 V VBE(on) Base-Emitter On Voltage IC= -50mA; VCE= -4V -1.0 V ICBO Collector Cutoff Current VCB= -120V; IE= 0 -1 μA hFE-1 DC Current Gain IC= -50mA; VCE= -4V 60 200 hFE-2 DC Current Gain Notes: ◆hFE-1 Classifications B C IC= -0.5A; VCE= -10V 60 60-120 100-200 ◆hFE-1 Pulse test Notice: ISC reserves the rights to make changes of the content herein the datasheet at any time without notificat...

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