2SB1530 |
Part Number | 2SB1530 |
Manufacturer | INCHANGE |
Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) ·Complement to Type 2SD2337 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed fo... |
Features |
itter Breakdown Voltage IC= -10mA; RBE= ∞
-150
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -5mA; IC= 0
-6
V
VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA
-3.0 V
VBE(on) Base-Emitter On Voltage
IC= -50mA; VCE= -4V
-1.0 V
ICBO
Collector Cutoff Current
VCB= -120V; IE= 0
-1 μA
hFE-1
DC Current Gain
IC= -50mA; VCE= -4V
60
200
hFE-2
DC Current Gain
Notes:
◆hFE-1 Classifications
B
C
IC= -0.5A; VCE= -10V
60
60-120 100-200
◆hFE-1 Pulse test
Notice: ISC reserves the rights to make changes of the content herein the datasheet at any time without notificat... |
Document |
2SB1530 Data Sheet
PDF 204.65KB |
Distributor | Stock | Price | Buy |
---|
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SB1530 |
Hitachi Semiconductor |
Silicon PNP Transistor | |
2 | 2SB1530 |
SavantIC |
SILICON POWER TRANSISTOR | |
3 | 2SB1531 |
Inchange Semiconductor |
Silicon PNP Power Transistor | |
4 | 2SB1531 |
Matsushita Electric |
Transistors | |
5 | 2SB1537 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor |