S2000 INCHANGE NPN Transistor Datasheet, en stock, prix

logo
Recherchez avec le numéro de pièce ainsi que le fabricant ou la description

S2000

INCHANGE
S2000
S2000 S2000
zoom Click to view a larger image
Part Number S2000
Manufacturer INCHANGE
Description ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Color TV h...
Features mitter-Base Breakdown Voltage IE= 1mA ;IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A ;IB= 1.0A VBE(sat) Base-Emitter Saturation Voltage IC= 4.5A ;IB= 1.0A ICBO Collector Cutoff Current VCB= 1500V; VBE= 0 hFE-1 DC Current Gain IC= 1A ; VCE= 5V hFE-2 DC Current Gain IC= 4.5A ; VCE= 5V COB Output Capacitance IE= 0 ; VCB= 10V;f= 1MHz fT Current-Gain—Bandwidth Product IC= 0.1A ; VCE= 10V S2000 MIN TYP MAX UNIT 700 V 5 V 5.0 V 1.2 V 1 mA 10 30 4.5 9 200 pF 2 MHz NOTICE: ISC reserves the rights to make changes of the content herein the datasheet a...

Document Datasheet S2000 Data Sheet
PDF 215.43KB
Distributor Stock Price Buy

Similar Datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 S2000
Toshiba
Silicon NPN Transistor Datasheet
2 S2000
SavantIC
SILICON POWER TRANSISTOR Datasheet
3 S2000A
Toshiba
Silicon NPN Transistor Datasheet
4 S2000A
SavantIC
SILICON POWER TRANSISTOR Datasheet
5 S2000AF
ST Microelectronics
High voltage NPN Power transistor Datasheet
More datasheet from INCHANGE



Depuis 2018 :: D4U Semiconductor :: (Politique de confidentialité et contact